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STMicroelectronics Press Release (March 11, 2026, 5:00 PM) STMicroelectronics Announces New MasterGaN Power ICs Combining Advanced GaN Technology and Flexibility
A new study from Enteligent found that shifting from traditional alternating current (AC) power to 800V direct current (800VDC) can dramatically reduce cost, energy waste, and infrastructure complexity in high-density AI data centers.But Enteligent is a developer of direct current (DC) power infrastructure for high-density loads, so it has a vested interest in such findings. But does that diminish the results? CEO Sean Burke says facts are facts.“We believe that DC is more efficient,” he said. “There are higher voltage levels in DC than AC infrastructure. It’s just a fact that we can run at higher volts, DC is fewer wires, and with the higher voltage it is beneficial to what we’re doing. From the standpoint of the facts related to AC and DC efficiencies and cost savings, we believe it is undebatable.”Many would say the alternating current and direct current wars between Nikola Tesla and Thomas Edison were settled more than a century ago, but Burke says the technology has improved and change the shape of the landscape for direct current.“AC won out because the technology wasn’t ready for DC,” he said. “The main thing [at the time] was about how do you transport long distances? The technology to do that with AC was available through basically inexpensive transformers. It was not there for DC, where now where we have solid state converters to be able to take DC power to high voltages and down to low voltages.”Within the confines of a data center’s walls, DC’s efficiencies become apparent. With DC, there are two power cables. With AC, there are 4 wires. So there is considerable wiring savings in an all-DC facility. Also, with higher voltage comes a lower current and current is what generates heat. So data centers that can run on 800VDC can run cooler.The result is a 50% to 80% reduction in copper usage, due to fewer conductors and less parallel cabling, and an 8% to 12% reduction in annual energy-related OpEx through lower conversion and distribution losses.By reducing conductor count, cabling, and redundant power components, 800VDC enables meaningful savings at both build-out and operational stages. AI-first facilities can see a $4 million to $8 million in CapEx savings per 10 MW build by reducing upstream AC. For a one-gigawatt data center, you’re saving a couple million pounds of copper wire, he said.Burke says an all-DC data center is best done with a whole new facility rather than retrofitting old facilities. “[DC] is going to be in a lot of greenfield data centers that are going to be built, and data centers that are going to go to higher compute power are also going to DC,” he said. He did recommend all-DC retrofits for existing data centers that are going to employ high power computing with GPUs.Enteligent’s unnamed and as yet unreleased product is a converter that takes 800 volts and partitions it to 50 volts for the computing servers. The company will provide a new power supply, power shelf that converts 800 volts DC to 50 volts DC much more efficiently than any current power supplies.Burke said the company is doing NDA level testing and pilot programs now with its product, but it will be making a formal announcement within the next few weeks. There are a number of players in the DC arena focusing on different parts of the power supply market including Vertiv, Rutherford, Siemens, Eaton and many more.
In this work, we systematically investigated the degradation and recovery behaviors of p-NiO/n-Ga2O3 heterojunction barrier Schottky diodes (HJBS) under high-temperature forward bias (HTFB) stress. Furthermore, based on the observed degradation trends in the device’s DC characteristics, a comprehensive analysis was conducted to elucidate the underlying degradation mechanisms. The as-fabricated HJBS structure, based on a p-NiO/n-Ga2O3 heterojunction, exhibited excellent electrical performance with a breakdown voltage exceeding 1kV and an on-resistance of 9.23 m $\Omega \cdot $ cm2. However, during actual circuit operation, devices are inevitably subjected to high-temperature and high-current stress conditions, leading to significant degradation in turn-on voltage and on-resistance. These challenges impose stricter requirements on the reliability of HJBS devices. The device underwent forward bias stress followed by recovery evaluation. After the forward bias stress (2.5 V at $25~^{\circ }$ C) for 15ks, only a 5.2% degradation in the turn-on voltage increase ( $\Delta {V}_{\text {on}}$ ) was observed. This degradation is attributed to the electron capture associated with donor traps. During the subsequent recovery phase, a nonrecoverable degradation of 2.7% in $\Delta {V}_{\text {on}}$ was recorded, which is believed to be caused by the presence of defects compensation or passivation within the bulk material that impeded the release of trapped electrons. These findings provide important insights for improving the reliability of Ga2O3 power devices.
The global landscape of electric vehicle EV and hybrid electric vehicle HEV powertrain development is undergoing a profound transformation driven by the escalating demand for higher efficiency superior thermal stability and robust power density Leading market research publisher QYResearch announces ...
Successfully develops SiC Planar MOSFET process platform for 450V–2300V, securing high reliability and yield competitiveness Accelerates SiC-based compound semiconductor foundry business by initiating 1200V SiC MOSFET development for a new customer SEOUL, South Korea, March 11, 2026 /PRNewswire/ -- SK keyfoundry, an 8-inch pure-play foundry in Korea, announced that it has recently completed the development of its SiC (Silicon Carbide) Planar MOSFET process platform, which is gaining traction in the next-generation compound power semiconductor market. The company also revealed that it has secured an order for the development of a 1200V SiC MOSFET product from a new customer, marking its full-scale entry into the SiC compound semiconductor foundry business. The new SiC Planar MOSFET process platform introduced by SK keyfoundry supports a wide voltage range of 450V to 2300V. It has proven its exceptional performance by securing high reliability and stability data particularly in high-voltage operating environments. In addition, through overall process optimization and precise control of core processes, the company has improved its yield to over 90% and enhanced productivity. Furthermore, SK keyfoundry stated that it offers a differentiated "customized process support service" that enables fine-tuning of electrical characteristics and specifications to meet specific customer requirements. Alongside the completion of this process platform development, SK keyfoundry has secured an order for a 1200V high-voltage product from a customer specializing in SiC design and has initiated its development. This process will be applied to the customer's industrial equipment, playing a critical role in thermal efficiency management. Following prototype evaluation and reliability verification, the company plans to begin full-scale mass production in the first half of 2027. The development of this SiC Planar MOSFET process platform represents the first fruit of integrating the core capabilities of both companies following SK keyfoundry's acquisition of SK powertech, a company specializing in SiC. Securing an actual customer order following the completion of technological development demonstrates that the platform has secured the level of maturity and competitiveness for immediate commercialization, moving beyond the technical verification stage. "The development of this SiC Planar MOSFET process platform is an achievement that demonstrates SK keyfoundry has secured independent technological leadership in the global compound semiconductor market," said Derek D. Lee, CEO of SK keyfoundry. "Based on our differentiated processes with high yield and reliability, we will continuously expand our high-voltage power semiconductor solutions to meet the needs of domestic and global customers." About SK keyfoundry Headquartered in Korea, SK keyfoundry provides specialty Analog and Mixed-Signal foundry services for semiconductor companies to serve a wide range of applications in the consumer, communications, computing, automotive and industrial industries. With a broad range of technology portfolios and process nodes, SK keyfoundry has the flexibility and capability to meet the ever-evolving needs of semiconductor companies across the globe. Please visit for more information.
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Indra Group is leading the RDI project GIGaNTE (Gallium Nitride (GaN) and Advanced Packaging Technologies Research Initiative)
Rohm hat beschlossen, seine eigenen Entwicklungs- und Fertigungstechnologien für GaN-Leistungsbauelemente mit der Prozesstechnologie von TSMC zu integrieren,
(Bild: Wolfspeed) Wolfspeed hat nach eigenen Angaben den ersten kommerziell verfügbaren Siliziumkarbid-MOSFET mit einer Sperrspannung von 10 kV vorgestellt. Das Bauelement zielt auf Anwendungen in Mittelspannungs-Netzinfrastrukturen, industrieller Elektrifizierung und Hochleistungs-Rechenzentren ab.
(Bild: RECOM Engineering GmbH & Co KG) Die Stromversorgung elektronischer Systeme steht seit einigen Jahren unter Druck. Einerseits steigen Anforderungen an Leistungsdichte, Wirkungsgrad und EMV-Verhalten. Andererseits nimmt die Zahl erfahrener analoger Entwickler ab. Neue Lösungen sind erforderlich.
Market Summary The global Gallium Nitride GaN Power Devices Market is witnessing rapid expansion as industries adopt next generation wide bandgap semiconductor technologies for high efficiency power conversion systems According to industry analysis the market was valued at US 571 ...
Market Summary The global Silicon Carbide SiC Power Semiconductors Market is experiencing strong growth as industries increasingly shift toward high efficiency power electronics and next generation energy systems According to recent industry analysis the market was valued at US 4 ...
The Silicone Based Transformer Oil Market is growing due to increasing demand for high-performance insulating fluids in electrical transformers.
HD Hyundai Electric announced that it held a groundbreaking ceremony for its second plant at the North American production subsidiary (HD Hyundai Power Transfo
Power Transformer Market – Expansion of power grids, renewable integration, and rising electricity demand boost the global power transformer market.
Publication date: March–April 2026Source: Journal of Materials Research and Technology, Volume 41Author(s): Shanshan Chen, Zenggan Bian, Zhibin Liu, Yue Cao, Bin Wang, Wenwu Zhang, Liyuan Sheng
The AC and DC Servo Motor Market is experiencing steady growth due to rising automation across manufacturing, robotics, and industrial machinery. These motors play a crucial role in delivering precise motion control, high efficiency, and reliability,
Emerging 10 kV silicon carbide (SiC) MOSFET based medium voltage (MV) converters have attracted increasing research interest due to their significantly improved performance compared with silicon (Si) IGBT based converters. The success of such MV converter design requires an accurate model of 10 kV SiC MOSFETs, which is proposed in this paper. The impact of high voltage on the transconductance and the dynamic gate charge characteristics of the 10 kV SiC MOSFET is first characterized. Based on these results, an improved switching model considering high voltage impact is proposed and experimentally verified. The developed model is then applied to aid the design of a 5-level MV flying capacitor converter (FCC). A low-cost decoupling capacitor solution for FCC switching cell is proposed. Challenges posed by high switching speed are examined using the developed model, with a gate resistances selection strategy proposed. Finally, a prototype of the 10 kV SiC device based MV 5L-FCC phase-leg is developed. Its reliable operation under high voltage (e.g., 23 kV) and very fast switching speed (e.g., >100 V/ns) are demonstrated.
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by improved materials and packaging technology.
The 600 V GaN half-bridge features integrated drivers that reduce the component count and simplify the layout.
TDK is introducing two new DC link capacitor series optimized for on-board chargers (OBCs) in electric vehicles: the ultra compact B43655 and B43656
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
In this article, we look at the technology in drones and focus on how solutions for the drone’s ESC can simplify motor control.
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